Patent attributes
An object is to increase the amount of substrate noise absorbed in a guard ring, and to prevent a malfunction caused by the substrate noise in a semiconductor device including an SOI substrate provided with the guard ring. Then, there is provided a semiconductor device, including: an SOI substrate in which a support substrate 10, an insulating layer 11, and an SOI layer 12 are stacked one by one; an element section 4 provided in one region of the SOI substrate; and a guard ring region 8 provided around the element section 4 of the SOI substrate, wherein a first diffusion layer 15 provided in the SOI layer 12 of the element section 4, and a second diffusion layer 26 provided in the SOI layer 12 of the guard ring region 8 are electrically connected to each other.
