Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 14, 2008
Patent Application Number
10591584
Date Filed
March 3, 2005
Patent Primary Examiner
Patent abstract
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.
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