Patent attributes
A method for repairing the storage capacitor on gate or the storage capacitor on common line is described. A portion area of the each pixel electrode is disposed above one of the scan lines or one of the common lines. An upper electrode is disposed between the pixel electrode and the corresponding scan line or the common line. The pixel electrode and the upper electrode are electrically connected. A defective capacitor is formed when a particle/defect is produced between the upper electrode and the common line or the scan line. The method of repairing the defective capacitor includes removing a portion area of the pixel electrode corresponding to the upper electrode of a defective storage capacitor and electrically isolating the upper electrode and the corresponding pixel electrode of the defective storage capacitor. The upper electrode and the scan line or common line of the defective capacitor are welded together.
