Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 21, 2008
Patent Application Number
11469582
Date Filed
September 1, 2006
Patent Primary Examiner
Patent abstract
A diode structure fabrication method. In a P− substrate, an N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of the diode structure. Upon the N+ layer, an N− layer is formed. Then, a P+ region is formed to serve as an anode of the diode structure. An N+ region can be formed on the surface of the substrate to serve as a cathode of the diode structure. By changing the size of the opening in the N+ layer during fabrication, the breakdown voltage of the diode structure can be changed (tuned) to a desired value.
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