Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsuro Aoki0
Junichi Nakai0
Date of Patent
October 21, 2008
0Patent Application Number
110065090
Date Filed
December 6, 2004
0Patent Primary Examiner
Patent abstract
A semiconductor device comprises a photoelectric conversion portion formed on a semiconductor substrate, a first transparent film provided on the photoelectric conversion portion, and an interlayer lens provided on the first transparent film at a position corresponding to the photoelectric conversion portion, in which the interlayer lens has a higher refractive index than the first transparent film, and at least one of upper and lower surfaces of a second transparent film formed with a thin film multilayer structure of two or more types of compounds is formed to have a protruded shape.
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