Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hitoshi Kobayashi0
Yasushi Takahashi0
Tomoki Inoue0
Satoshi Aida0
Date of Patent
October 21, 2008
0Patent Application Number
111173310
Date Filed
April 29, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second element regions disposed between the first element regions; and isolation regions disposed between the active element cells so as to isolate the active element cells from each other, the isolation regions being filled with a plurality of semi-insulating particles including granular insulators covered by semiconductor films.
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