US Patent 7443899 Surface emitting semiconductor laser diode and manufacturing method thereof

A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.