Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 4, 2008
Patent Application Number
11055908
Date Filed
February 11, 2005
Patent Primary Examiner
Patent abstract
A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with a dopant-bearing metal, and a low-temperature anneal process is used to form doped regions within the workpiece adjacent the dopant-bearing metal regions. A transistor having a small effective oxide thickness and a well-controlled junction depth is formed.
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