Patent attributes
A Q-modulated semiconductor laser comprises an optical gain section and an electro-absorptive modulator section, separated by a vertically etched air gap acting as a partially reflecting mirror. The modulator section is placed inside an anti-resonant Fabry-Perot cavity and acts as the rear reflector of the laser. The change of the absorption coefficient in the modulator section results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Different embodiments are disclosed, which involve a distributed feedback (DFB) laser, a Fabry-Perot laser, a distributed Bragg reflector (DBR) laser, or a wavelength switchable multi-cavity laser. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
