US Patent 7449359 Fabricating method of CMOS image sensor

A fabricating method of a CMOS image sensor is disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The CMOS image sensor includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.