Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 11, 2008
Patent Application Number
11115685
Date Filed
April 26, 2005
Patent Primary Examiner
Patent abstract
A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.
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