US Patent 7449630 Solar cell having an integral monolithically grown bypass diode
Patent 7449630 was granted and assigned to Emcore Corporation on November, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Chaw-Long Chu0
Frank Ho0
Milton Y. Yeh0
Peter A. Iles0
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Patent abstract
The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
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Official Website
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US Patent 07449630 Solar cell having an integral monolithically grown bypass diode US Patent 7449630 Solar cell having an integral monolithically grown bypass diode
Infobox
Patent Number
074496300
Patent Number
74496300
Edits on 7 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074496300
Date of Patent
November 11, 2008
0Patent Application Number
111000660
Date Filed
April 6, 2005
0Official Website
Patent Primary Examiner
Edits on 14 Jun, 2022
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US Patent 07449630 Solar cell having an integral monolithically grown bypass diode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07449630
Date of patent
November 11, 2008
Patent application number
11100066
Date Filed
April 6, 2005
Patent primary examiner
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