Patent attributes
The electrostatic protection device comprises a semiconductor substrate of a first conductivity type, a well of a second conductivity type formed on the semiconductor substrate, a first diffusion layer of the first conductivity type formed on the second conductivity type well and connected to a signal terminal, a first well of the first conductivity type formed on the semiconductor substrate, a first diffusion layer of the second conductivity type formed on the first well and connected to a ground terminal, a second well of the first conductivity type formed on the semiconductor substrate and spaced apart from the first well and a second diffusion layer of the first conductivity type formed on the second well connected to a ground terminal.
