Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naoya Sashida0
Date of Patent
November 25, 2008
0Patent Application Number
100968640
Date Filed
March 14, 2002
0Patent Primary Examiner
Patent abstract
According to the present invention, contact plugs are formed by a CVD method without deteriorating the properties of the ferroelectric capacitor in a semiconductor device having a fine ferroelectric capacitor. Adhesive film is formed in a contact hole, which exposes an upper electrode of the ferroelectric capacitor after conducting heat treatment in an oxidizing atmosphere, and a W layer is deposited by the CVD method using such TiN adhesive film as a hydrogen barrier and the contact hole is filled.
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