Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 25, 2008
Patent Application Number
11616680
Date Filed
December 27, 2006
Patent Primary Examiner
Patent abstract
A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
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