Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 2, 2008
0Patent Application Number
112932790
Date Filed
December 5, 2005
0Patent Primary Examiner
Patent abstract
A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.
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