Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Frank Randolph Bryant0
Date of Patent
December 2, 2008
0Patent Application Number
098583970
Date Filed
May 16, 2001
0Patent Primary Examiner
Patent abstract
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.
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