US Patent 7459764 Method of manufacture of a PCRAM memory cell
Patent 7459764 was granted and assigned to Micron Technology on December, 2008 by the United States Patent and Trademark Office.
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Patent abstract
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
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US Patent 07459764 Method of manufacture of a PCRAM memory cell US Patent 7459764 Method of manufacture of a PCRAM memory cell
Infobox
Patent Number
0745976400
Patent Number
745976400
Edits on 2 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074597640
Date of Patent
December 2, 2008
0Patent Application Number
108866760
Date Filed
July 9, 2004
0Official Website
Patent Primary Examiner
Edits on 28 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074597640
Date of Patent
December 2, 2008
0Patent Application Number
108866760
Date Filed
July 9, 2004
0Official Website
Patent Primary Examiner
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US Patent 07459764 Method of manufacture of a PCRAM memory cell
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07459764
Date of patent
December 2, 2008
Patent application number
10886676
Date Filed
July 9, 2004
Patent primary examiner
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