Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 16, 2008
Patent Application Number
11661696
Date Filed
June 6, 2005
Patent Primary Examiner
Patent abstract
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the subtrate.
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