US Patent 7465627 Methods of forming capacitors

This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric silicon and nitrogen comprising material is exposed to an aqueous fluid comprising a base and an oxidizer. The aqueous fluid has a pH greater than 7.0. After the exposing to the aqueous fluid, an aluminum oxide comprising capacitor dielectric material is deposited over the first capacitor electrode material. A second capacitor electrode material is formed over the aluminum oxide comprising capacitor dielectric material. Other aspects and implementations are contemplated.