Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 16, 2008
Patent Application Number
11543071
Date Filed
October 5, 2006
Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device includes subjecting a semiconductor substrate to thermal treatment at a temperature ranging from 770 to 830° C. to fix channel ions then forming a HTO film. The method thereby prevents a threshold voltage of a gate from changing due to diffusion of channel ions.
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