Patent attributes
A non-volatile semiconductor device provides a pull-up transistor (M1) for a word line drive which can be downsized. The semiconductor device includes a first decoder (109) including a pull-up transistor (M1) selecting and driving a word line (P2WL) connected to memory cells, a first voltage generating circuit (102) generating a first voltage applied to a source terminal of the pull-up transistor (M1), a second voltage generating circuit (105) generating a second voltage that is applied to a gate terminal of the pull-up transistor (M1), is the second voltage higher than the first voltage, sectors including the memory cells, a vertical word line (VWL) connecting the sectors in a vertical direction and carrying the first voltage to the source terminal of the pull-up transistor (M1), a global word line (GWL) connecting the sectors in a lateral direction and carrying the second voltage to the gate terminal of the pull-up transistor (M1), a second decoder (108) selecting and driving the global word line (GWL), and a third decoder (104) selecting and driving the vertical word line (VWL).
