Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisato Yabuta0
Nobuyuki Kaji0
Date of Patent
December 23, 2008
0Patent Application Number
114669500
Date Filed
August 24, 2006
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
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