Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 23, 2008
Patent Application Number
10788899
Date Filed
February 27, 2004
Patent Primary Examiner
Patent abstract
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.
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