Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Michael Heuken0
Bernd Wachtendorf0
Gerd Strauch0
Holger Jürgensen0
Bernd Schottker0
Date of Patent
January 6, 2009
0Patent Application Number
096242520
Date Filed
July 24, 2000
0Patent Primary Examiner
Patent abstract
What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.
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