Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ravindra Soman0
Sunit Tyagi0
Stephen M. Cea0
Ramune Nagisetty0
Sanjay Natarajan0
Date of Patent
January 6, 2009
0Patent Application Number
112924280
Date Filed
December 1, 2005
0Patent Primary Examiner
Patent abstract
Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.
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