Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takao Sato0
Date of Patent
January 13, 2009
0Patent Application Number
112815170
Date Filed
November 18, 2005
0Patent Primary Examiner
Patent abstract
A midair semiconductor device includes a Si substrate provided with an element part on its front surface side. An opening is formed in the Si substrate in such a manner that a rear surface of the element part is exposed. The opening is provided below the element part while penetrating through the Si substrate. The front surface side of the Si substrate is sealed with a first cap part such as a Si cap such that a portion above the element part is brought into a midair state. A second cap part such as a Si cap is bonded to the rear surface side of the Si substrate so that the opening is sealed.
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