Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dong-Chan Kim0
Date of Patent
January 13, 2009
Patent Application Number
11358897
Date Filed
February 21, 2006
Patent Primary Examiner
Patent abstract
A flash memory device includes a common source region that is disposed in an active region at a side of a ground-selection gate line, being apart from the ground-selection gate line. A pair of source spacers crosses over both top edges of the common source region. A source line fills up a space between the pair of source spacers. The top surface of the source line is equal to or lower than the that of the ground-selection gate line.
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