Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jung Geun Kim0
Ki Hong Yang0
Date of Patent
January 20, 2009
0Patent Application Number
111593060
Date Filed
June 23, 2005
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device in a MLM process to reduce compression stress of a metal line or a HDP oxide film, and to reduce compression stress in a subsequent metal line thermal treatment process. It is thus possible to reduce generation of a crack caused by compression stress. Further, by obviating a heterogeneous interface becoming a cause of a crack and stabilizing the interface of an unstable TEOS oxide film, generation of a crack in a semiconductor device can be reduced.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
