US Patent 7481881 Method of manufacturing GaN crystal substrate

Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.