Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tzung-Yu Hung0
Chao-Ching Hsieh0
Chun-Chieh Chang0
Date of Patent
January 27, 2009
0Patent Application Number
118290870
Date Filed
July 27, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.
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