Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masato Koyama0
Reika Ichihara0
Yoshinori Tsuchiya0
Date of Patent
February 3, 2009
Patent Application Number
11355132
Date Filed
February 16, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
It is possible to provide a semiconductor device including a CMOS device having a gate electrode, in which the variation in threshold voltage is little. There are a p-channel MIS transistor and a n-channel MIS transistor which are provided in a semiconductor substrate, and in a region of a gate electrode of the p-channel MIS transistor at least 1 nm or less apart from the interface with a gate insulating film, the oxygen concentration is 1020 cm−3 or more and 1022 cm−3 or less.
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