Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhen-Cheng Wu0
Chung-Chi Ko0
Keng-Chu Lin0
Shwang-Ming Jeng0
Chia-Cheng Chou0
Date of Patent
February 3, 2009
Patent Application Number
11797310
Date Filed
May 2, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device is disclosed. The device includes a substrate, a first porous SiCOH dielectric layer, a second porous SiCOH dielectric layer, and an oxide layer. The first porous SiCOH dielectric layer overlies the substrate. The second porous SiCOH dielectric layer overlies the first porous SiCOH dielectric layer. The oxide layer overlies the second porous SiCOH dielectric layer. The atomic percentage of carbon in the second porous SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
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