Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 10, 2009
Patent Application Number
11018643
Date Filed
December 21, 2004
Patent Primary Examiner
Patent abstract
Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.
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