Patent attributes
A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surface side of the semiconductor substrate other than at least on the electrode pattern. And a method of manufacturing a semiconductor device, includes: forming elements on a semiconductor substrate; forming electrodes in a predetermined part on the elements; affixing an insulator sheet of 50 micrometers or greater in thickness to the upper surface side of the semiconductor substrate, the insulator sheet being processed to remove some parts so as to be aligned with the electrodes or regions where the elements are provided, processing a back surface side of the semiconductor substrate affixed within the insulator sheet to form the semiconductor substrate of 100 micrometers or lower in thickness, and dicing the semiconductor substrate into semiconductor chips.
