Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyu-Hwan Choi0
Date of Patent
February 17, 2009
Patent Application Number
11768332
Date Filed
June 26, 2007
Patent Primary Examiner
Patent abstract
A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned between the channel region and a source/drain region, wherein a projected range of ions doped on the semiconductor layer extends to a first depth from the surface of the semiconductor layer in the LDD region.
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