US Patent 7491645 Method for manufacturing a semiconductor device
Patent 7491645 was granted and assigned to Genesis Photonics Inc. on February, 2009 by the United States Patent and Trademark Office.
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A method for manufacturing a semiconductor device includes: forming a protrusion-patterned layer on a substrate, the protrusion-patterned layer including a plurality of separated protrusions, each of which includes a base portion formed on the substrate and a top end portion opposite to the base portion; laterally growing a base layer on the top end portions of the protrusions of the protrusion-patterned layer in such a manner that each of the top end portions is covered by the base layer and that the base layer cooperates with the protrusions to define a plurality of cavities thereamong; thickening the base layer to a predetermined layer thickness; and separating the base layer from the substrate by destroying the protrusions of the protrusion-patterned layer.
US Patent 07491645 Method for manufacturing a semiconductor device US Patent 7491645 Method for manufacturing a semiconductor device
US Patent 07491645 Method for manufacturing a semiconductor device
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