US Patent 7491650 Etch compositions and methods of processing a substrate
Patent 7491650 was granted and assigned to Micron Technology on February, 2009 by the United States Patent and Trademark Office.
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The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
US Patent 07491650 Etch compositions and methods of processing a substrate US Patent 7491650 Etch compositions and methods of processing a substrate
US Patent 07491650 Etch compositions and methods of processing a substrate
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