Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 24, 2009
Patent Application Number
11129795
Date Filed
May 16, 2005
Patent Primary Examiner
Patent abstract
A non-volatile memory comprising a semiconductor active layer provided on an insulating substrate, an insulating film provided on the. semiconductor active layer, a floating gate electrode provided on the insulating film, an anodic oxidized film obtained by anodic oxidation of the floating gate electrode, and a control gate electrode provided in contact with the anodic oxidized film, and a semiconductor device, particularly a liquid crystal display device comprising the non-volatile memory.
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