Patent attributes
A semiconductor device according to the present invention is a semiconductor device for driving and controlling a power device in the high-potential side of two power devices connected in series between a main power source potential of a high potential and a main power source potential of a low potential, and is equipped with a pulse generating circuit for generating first and second pulse signals corresponding to the level transition to first and second states of input signals having a first state showing the conduction of the power device in the high-potential side and a second state showing the non-conduction of the power device in the high-potential side, respectively; a level shift circuit for obtaining first and second level-shifted pulse signals by level-shifting the first and second pulse signals to the high-potential side; an SR-type flip-flop circuit inputting the first level-shifted pulse signals from set input terminal and the second level-shifted pulse signals from reset input terminal; and a delay circuit for delaying the output of the SR-type flip-flop circuit by at least the pulse width of the first and second pulse signals.
