US Patent 7495944 Reading phase change memories
Patent 7495944 was granted and assigned to Ovonyx on February, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Claudio Resta0
Ferdinando Bedeschi0
Giulio Casagrande0
Roberto Gastaldi0
Ward D. Parkinson0
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Patent abstract
A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
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US Patent 07495944 Reading phase change memories US Patent 7495944 Reading phase change memories
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Patent Number
074959440
Patent Number
74959440
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
074959440
Date of Patent
February 24, 2009
0Patent Application Number
110938780
Date Filed
March 30, 2005
0Official Website
Patent Primary Examiner
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US Patent 07495944 Reading phase change memories
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07495944
Date of patent
February 24, 2009
Patent application number
11093878
Date Filed
March 30, 2005
Patent primary examiner
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