US Patent 7498634 Semiconductor device having IGBT and diode

Patent 7498634 was granted and assigned to Denso on March, 2009 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Denso

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7498634

Date of Patent

March 3, 2009

Patent Application Number

11649367

Date Filed

January 4, 2007

Patent Primary Examiner

‌

Zandra Smith

Patent abstract

A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.

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