Patent attributes
A mixer of a homodyne RF receiver made from a CMOS process is provided. The mixer comprises a gain stage, a switch stage and a load stage. The gain stage receives a differential-typed RF signal and generating a first gained signal. The switch stage mixes the first gained signal and a LO signal to direct down-convert into a modulated signal. The load stage comprises a first transistor, an impedance element and a second transistor. The first transistor provides a low impedance to permit the modulated signal entering the load stage. The second transistor provides a high impedance to resist signals. The load stage converts the modulated signal to a second gained signal according to a first gain coefficient of the impedance element. The first transistor is a parallel pnp BJT, and the second transistor is a vertical npn bipolar BJT.
