Patent attributes
A semiconductor device includes a resistive element having a resistance characteristic not influenced by fluctuations in power supply voltage and a signal output circuit having a desired output impedance characteristic not influenced by fluctuations in power supply voltage. A constant current based on a reference voltage corresponding to a ground potential point is generated, and passed to a first resistive element whose one end is connected to a power supply voltage terminal. A voltage generated by the first resistive element is supplied to a first differential amplifier, whose output voltage is supplied to the gate of a first MOSFET whose source is connected to the power supply voltage terminal. A drain voltage to the first MOSFET is fed back to the first differential amplifier. A first current source is between the drain of the first MOSFET and the ground potential point. A second MOSFET is used as a resistive element.
