Patent 7504135 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on March, 2009 by the United States Patent and Trademark Office.
A method of fabricating a diffusion barrier using a gas cluster ion beam apparatus is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound that includes an element of cobalt (Co) or cobalt and iron (CoFe). The metal-organic gas is combined with a carrier gas that is supplied to the gas cluster ion beam apparatus (GCIB). The GCIB processes the carrier gas to form a beam of gas cluster ions that include the metal-organic compound. The beam irradiates an interface surface of a target material (e.g. an IrMn, PtMn, or MnFe antiferromagnetic layer) and at least a portion of the Co or CoFe remains in contact with the interface surface to form a barrier that prevents a diffusion of manganese (Mn).