Patent attributes
A semiconductor device includes: a first semiconductor layer represented by a composition formula AlxGa1-xN (0≦x≦1); a first conductivity type or non-doped second semiconductor layer represented by a composition formula AlyGa1-yN (0≦y≦1, x<y) and formed on the first semiconductor layer; a second conductivity type third semiconductor layer represented by a composition formula AlxGa1-xN (0≦x≦1) and selectively formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; a source electrode electrically connected to the second semiconductor layer; and a drain electrode electrically connected to the second semiconductor layer. The distance between the drain electrode and the third semiconductor layer is longer than the distance between the source electrode and the third semiconductor layer.
