Patent attributes
A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.