Patent attributes
A semiconductor device includes a semiconductor substrate, a gate insulating film, gate electrodes, a first silicon oxide film, bit lines formed on the first silicon oxide film and including lower surfaces having respective recesses, a contact plug layer located between the gate electrodes and including a first portion, a second portion having a fourth side surface between the opposed second side surfaces of first silicon oxide film and a third portion having an upper surface and fifth side surfaces embedded in the respective recesses of the bit line, a first silicon nitride layer between a third side surface of the first portion of the contact plug and a first side surface of the gate electrode, and a second silicon oxide film. The entire upper surface and fifth side surface of the third portion of the contact plug directly contact with inner surfaces of the recesses respectively.
