Patent attributes
A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for making contact with the source and body regions, contact being made with the source and body regions by means of the first electrode, and at least the bottom of each contact hole adjoining at least one drift region, so that Schottky contacts between the first electrode and corresponding drift regions are formed at the bottoms of the contact holes. The dimensions and configurations of the body regions or of the body contact regions optionally arranged between body regions and contact holes are chosen in such a way as to avoid excessive increases in electric fields at the edges of the contact hole bottoms.
