Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Howard E. Rhodes0
Inna Patrick0
Richard A. Mauritzson0
Date of Patent
March 31, 2009
Patent Application Number
11636658
Date Filed
December 11, 2006
Patent Primary Examiner
Patent abstract
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
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